VT VT Vinh Nguyen Group




Contact information:

Department of Physics
Virginia Tech, MC 0435
Blacksburg, VA 24061
Tel: (540) 231-3158
Fax: (540) 231-7511


PUBLICATIONS

2021

95. Abhishek K. Singh, Chengyuan Wen, Shengfeng Cheng, and Nguyen Q. Vinh
Long-Range DNA-Water Interactions
Biophysical Journal 120, 4966 (2021)

94. Wenbo Wang, Chang-Yu Hung, Leslie Howe, Jia Chen, Kaiwen Wang, Vinh X. Ho, Shannon Lenahan, Mitsuhiro Murayama, Nguyen Q. Vinh, and Wenjun Cai1
Enabling High-Performance Surfaces of Biodegrade Magnesium Alloys via Femtosecond Laser Shock Peening with Ultra-low Pulse Energy
ACS Applied Bio Materials 4, 7903 (2021)

93. Y. Wang, V. X. Ho, Z. N. Henschel, M. P. Cooney, and N. Q. Vinh
Interfacial Photogating Effect for Hybrid Graphene-Based Photodetectors
ACS Applied Nano Materials 4, 8539 (2021)

92. N. Munir, J. R. Mahan, L. C. Doan, N. Q. Vinh, K. J. Priestley
Gold-black manufacture, microstructure, and optical characterization
Applied Optics 60, 6857 (2021)

91. V. X. Ho, Y. Wang, M. P. Cooney, and N. Q. Vinh
Graphene-Ta2O5 Heterostructure Enabled High Performance, Deep-Ultraviolet to Mid-Infrared Photodetection
Nanoscale 13, 10526 (2021)

90. Y. Wang, V. X. Ho, Z. N. Henschel, M. P. Cooney, and N. Q. Vinh
Effect of High-κ Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
ACS Applied Nano Materials 4, 3647 (2021)

2020

89. (Conference paper) Y. Wang, V. X. Ho, Z. N. Henschel, Prashant Pradhan, L. Howe, M. P. Cooney, and N. Q. Vinh
Graphene Photodetector Based on Interfacial Photogating Effect with High Sensitivity
Proceedings of SPIE 11503, 1150306 (2020) Optical Engineering + Applications

88. (Conference paper) L. C. Doan and N. Q. Vinh
Investigating Hydration Dynamics and Protein Collective Motions by Highp-Pecision Dielectric Spectroscopy
Proceedings of SPIE 11499, 114990O (2020) Optical Engineering + Applications

87. (Conference paper) V. X. Ho, B. Ryan, J. R. Cui, P. Pradhan, and N. Q. Vinh
Optical Gain in Er Doped GaN Multiple Quantum Wells
Proceedings of SPIE 11467, 114671Q (2020) Nanoscience + Engineering

86. M-E. Song, D. Maurya, Y. Wang, J. Wang, M-G. Kang, D. Walker, P. A. Thomas, S. T. Huxtable, R. J. Bodnar, N. Q. Vinh, and S. Priya
Phase Transitions and Phonon Mode Dynamics of Ba(Cu1/3Nb2/3)O3and Sr(Cu1/3Nb2/3)O3 for Understanding Thermoelectric Response
ACS Applied Energy Materials 3, 3939 (2020).

85. V. X. Ho, Y. Wang, B. Ryan, L. Patrick, H. X. Jiang, J. Y. Lin, and N. Q. Vinh
Observation of Optical Gain in Er-Doped GaN Epilayers
Journal of Luminescence 221, 117090 (2020).

2019

84. A. Charkhesht, D. Lou, B. Sindle, C. Wen, S. Cheng, and N. Q. Vinh
Insights into Hydration Dynamics and Cooperative Interactions in Glycerol-Water Mixtures by Terahertz Dielectric Spectroscopy
The Journal of Physical Chemistry B 123, 8791 (2019).

83. (Conference paper) Y. Wang, V. X. Ho, P. Pradhan, M. P. Cooney, and N. Q. Vinh
Graphene-Germanium Quantum Dot Photodetector with High Sensitivity
Proceedings of SPIE 11088, 110888 (2019) Nanoscience + Engineering

82. (Conference paper) L. C. Doan, J. R. Mahan, K. J. Priestley, and N. Q. Vinh
Measuring Bidirectional Reflectance Distribution of Low Reflectivity Surfaces in the Near Infrared
Proceedings of SPIE 11103, 111030I (2019) Optical Engineering + Applications

81. (Conference paper) D. Shirsekar, N. Q. Vinh, J. R. Mahan, Kory J. Priestley,
Design and Demonstration of an Automated Bidirectional Reflectometer for Low-Reflectivity Optical Coatings
The 4th Thermal and Fluids Engineering Conference, (2019).

2018

80. A. Charkhesht, C. Regmi, K. R. Mitchell-Koch, S. Cheng, and N. Q. Vinh
High-Precision Megahertz-to-Terahertz Dielectric Spectroscopy of Protein Collective Motions and Hydration Dynamics
The Journal of Physical Chemistry B 122, 6341 (2018).

79. (Conference paper) V. X. Ho, T. M. Al Tahtamouni, Y. Wang, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature
Laser Congress 2018 (ASSL), ATu4A.2 (2018).

78. V. X. Ho, T. M. Al Tahtamouni, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region
ACS Photonics 5, 1303 (2018).

77. (Conference paper) V. X. Ho, Y. Wang, M. P. Cooney, and N. Q. Vinh
Graphene-Based Photodetector at Room Temperature
Proceedings of SPIE 10729, 1072907 (2018) Nanoscience + Engineering

76. (Conference paper) D. Shirsekar, Y. Wang, J. R. Mahan, K. J. Priestley, and N. Q. Vinh
Bidirectional Reflectance Measurement of Black Absorber Layers for Use in Optical Instrument Design
Proceedings of SPIE 10743, 1074303 (2018) Optical Engineering + Applications

75. J. R. Mahan, N. Q. Vinh, V. X. Ho, and N. B. Munir
Monte Carlo ray-trace diffraction based on the Huygens-Fresnel principle
Applied Optics 57, D56 (2018).

74. (Conference paper) J. R. Mahan, N. Q. Vinh, and K. J. Priestley
An Application of the Monte Carlo Ray-Trace Method with Bidirectional Reflection
The 3rd Thermal and Fluids Engineering Conference, (2018).

2017

73. D. Maurya, A. Charkhesht, S. K. Nayak, F-C. Sun, D. George, A. Pramanick, M-G. Kang, H-C. Song, M. M. Alexander, D. Lou, G. A. Khodaparast, S. P. Alpay, N. Q. Vinh, and S. Priya
Soft Phonon Mode Dynamics in Aurivillius Type Structures
Physical Review B 96, 134114 (2017).

72. (Conference paper) V. X. Ho, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
Rare Earth doped GaN for photonic devices
Advanced Photonics (IPR, NOMA, Sensors, Networks, SPPCom, PS), ITh2C.5 (2017).

71. V. X. Ho, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, S. A. McGill, and N. Q. Vinh
Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
Scientific Reports, 7 39997 (2017).

70. V. X. Ho, S. P. Dail, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD
MRS Advances, 2, 135 (2017).

2016

69. (Conference, Invited paper) N. Q. Vinh
Probe conformational dynamics of proteins in aqueous solutions by terahertz spectroscopy
Proceedings of SPIE 9934, 99340R (2016).

68. D. K. George, A. Charkhesht, O. A. Hull, A. Mishra, D. G. S. Capelluto, K. R. Mitchell-Koch, and N. Q. Vinh
New Insights into the Dynamics of Zwitterionic Micelles and Their Hydration Waters by Gigahertz-to-Terahertz Dielectric Spectroscopy
The Journal of Physical Chemistry B 120, 10757 (2016).

67. (Conference, Invited paper) D. K. George, M. D. Hawkins, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
Optical excitation of Er centers in GaN epilayers grown by MOCVD
Proceedings of SPIE 9744, 97440V (2016).

2015

66. D. K. George, A. Charkhesht, and N. Q. Vinh
New terahertz dielectric spectroscopy for the study aqueous solutions
Review of Scientific Instruments 86, 123105 (2015), e-print arXiv:1507.05322 (2015).

65. D. K. George, M. D. Hawkins, M. McLaren, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
Excitation mechanisms of Er optical centers in GaN epilayers
Applied Physics Letters 107, 171105 (2015), e-print arXiv:1507.05119 (2015).

2014

64. N. Q. Vinh, M. S. Sherwin, S. J. Allen, D. K. George, A. J. Rahmani, and K. W. Plaxco
High-precision gigahertz-to-terahertz spectroscopy of aqueous salt solutions as a probe of the femtosecond-to-picosecond dynamics of liquid water
and Supporting Information for the J. Chem. Phys. 142,164502
The Journal of Chemical Physics 142, 164502 (2015), e-print arXiv:1505.07100 (2014).

2013

63. N. Q. Vinh, B. Redlich, A. F. G. van der Meer, C. R. Pidgeon, P. T. Greenland, S. A. Lynch, G. Aeppli, and B. N. Murdin
Time-resolved dynamics of shallow acceptors transitions in silicon
Physical Review X 3, 011019 (2013).

2012

62. G. C. Dyer, G. R. Aizin, S. Preu, N. Q. Vinh, S. J. Allen, J. L. Reno, and E. A. Shaner
Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities
Physical Review Letters 109, 126803 (2012).

61. (Conference paper) S. A. Lynch, P. T. Greenland, A. F. G. van der Meer, B. N. Murdin, C. R. Pidgeon, B. Redlich, N. Q. Vinh, and G. Aeppli
Quantum control in silicon using coherent THz pulses
Proceedings of SPIE 8496, 84960O (2012), (Invited paper).

60. S. Preu, S. Kim, R. Verma, P. G. Burke, N. Q. Vinh, M. S. Sherwin, and A. C. Gossard
Terahertz Detection by a Homodyne Field Effect Transistor Multiplicative Mixer
IEEE Transactions on Terahertz Science and Technology 2, 278 (2012).

59. G. C. Dyer, S. Preu, G. R. Aizin, J. Mikalopas, A. D. Grine, J. L. Reno, J. M. Hensley, N. Q. Vinh, A. C. Gossard, M. S. Sherwin, S. J. Allen, and E. A. Shaner
Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity
Applied Physics Letters. 100, 083506 (2012).

2011

58. N. Q. Vinh, S. J. Allen, and K. W. Plaxco
Dielectric spectroscopy of proteins as a quantitative experimental test of computational models of their low-frequency harmonic motions
Journal of the American Chemical Society 133, 8942 (2011).

2010

57. G. C. Dyer, N. Q. Vinh, S. J. Allen, G. R. Aizin, J. Mikalopas, J. L. Reno, and E. A. Shaner
A terahertz plasmon cavity detector
Applied Physics Letters. 97, 193507 (2010).

56. P. T. Greenland, S. A. Lynch, A. F. G. van der Meer, B. N. Murdin, C. R. Pidgeon, B. Redlich, N. Q. Vinh, G. Aeppli
Coherent Control of Rydberg States in Silicon
Nature 465, 1057 (2010).

55. B. Wittmann, S. N. Danilov, S. A. Tarasenko, V. V. Bel’kov, E.G. Novik, H. Buhmann, C. Brune, L. W. Molenkamp, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, N. Q.Vinh, A. F. G. van der Meer, B. Murdin, and S. D. Ganichev
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
Semiconductor Science and Technology 25, 095005 (2010).

54. G. Davies, G. Liaugaudas, N. Q. Vinh, and K. Litvinenko
Three phonon decay mode of the 1136-cm-1 v3 vibration of oxygen in silicon
Physical Review B 81, 033201 (2010).

53. (Conference paper) S. A. Lynch, P. T. Greenland, A. F. G. van der Meer, B. N. Murdin, C. R. Pidgeon, B. Redlich, N. Q. Vinh, and G. Aeppli
Quantum Control of Phosphorus Donor Rydberg States in Silicon
7th IEEE International Conference on Group IV Photonics, 380 (2010).

52. (Conference paper) S. A. Lynch, P. T. Greenland, A. F. G. van der Meer, B. N. Murdin, C. R. Pidgeon, B. Redlich, N. Q. Vinh, and G. Aeppli
First observation of a THz photon echo
7th IEEE International Conference on Group IV Photonics, 380 (2010).

2009

51. G. Davies, K. K. Kohli, P. Clauws, and N. Q. Vinh
Decay mechanism of the v3 865 cm-1 vibration of oxygen in crystalline germanium
Physical Review B 80, 113202 (2009).

50. R. P. Green, A. Tredicucci, N. Q. Vinh, B. Murdin, C. Pidgeon, H. E. Beere, and D. A. Ritchie
Gain recovery dynamics of a terahertz quantum cascade laser
Physical Review B 80, 075303 (2009).

49. (Review paper) N. Q. Vinh, H. N. Ngo, and T. Gregorkiewicz
Photonic properties of Er-doped crystalline silicon
The proceedings of the IEEE 97, 1269 (2009).

48. P. Rauter, T. Fromherz, N. Q. Vinh, G. Mussler, D. Grutzmacher, and G. Bauer
Continuous Voltage Tunability of Intersubband Relaxation Times in SiGe Quantum Well Structures
Physical Review Letters 102, 147401 (2009).

47. (Conference paper) S. N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W. Prettl, L. E. Golub, E. V. Beregulin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. A. Shalygin, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, and S. D. Ganichev
All Electrical Detection of the Stokes Parameters of IR/THz Radiation
34th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2009), Busan, South Korea (2009).

46. S. Minissale, N. Q. Vinh, A. F. G. van der Meer, M. S. Bresler, and T. Gregorkiewicz
Observation of THz transitions within the 4I15/2 ground multiplet of Er3+ ion in Si
Physical Review B 79, 115324 (2009).

45. S. N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W. Prettl, L. E. Golub, E. V. Beregulin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. A. Shalygin, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, and S. D. Ganichev
Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
Journal of Applied Physics 105, 013106 (2009); e-print arXiv:0810.1205.

44. K. K. Kohli, N. Q.Vinh, P. Clauws, and G. Davies
Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys
Physica B 404, 4689 (2009).

43. S. Minissale, N. Q. Vinh, and T. Gregorkiewicz
On relation between the 1.5 mm Er-related emission and 9 mm vibrational modes of oxygen in silicon
Physica E 41, 1052 (2009).

2008

42. B. Wittmann, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, and S. D. Ganichev
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
Physical Review B 78, 205435 (2008); e-print arXiv:0809.2718.

41. C. Balocco, M. Halsall, N. Q. Vinh, and A. M. Song
THz operations of asymmetric-nanochannel devices
Journal of Physics: Condensed Matter 20, 384203 (2008).

40. N. Q. Vinh, P. T. Greenland, K. Litvinenko, B. Redlich, A. F. G. van der Meer, S. A. Lynch, M. Warner, A. M. Stoneham, G. Aeppli, D. J. Paul, C. R. Pidgeon and B. N. Murdin
Silicon as a model ion trap: Time domain measurements of donor Rydberg states
Proceedings of the National Academy of Sciences of the USA 105, 10649 (2008); e-print arXiv:0812.0148.

39. S. Minissale, N. Q. Vinh, W. de Boer, M. S. Bresler, and T. Gregorkiewicz
Microscopic evidence for role of oxygen in luminescence of Er3+ ions in Si: Two-color and pump-probe spectroscopy
Physical Review B 78, 035313 (2008).

38. W. Weber, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, V. V. Bel’kov, E. L. Ivchenko, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, and S. D. Ganichev
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
Physical Review B 77, 245304 (2008); e-print arXiv:0804.0342.

37. (Conference paper) S. A. Lynch, P. T. Greenland, N. Q. Vinh, K. Litvinenko, B. Redlich, A. F. G. van der Meer, M. Warner, A. M. Stoneham, G. Aeppli, C. R. Pidgeon, and B. N. Murdin
Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies
5th IEEE International Conference on Group IV Photonics, 24 (2008).

36. E. A. Zibik, T. Grange, B. A. Carpenter, R. Ferreira, G. Bastard, N. Q. Vinh, P. J. Phillips, M. J. Steer, M. Hopkinson, J. W. Cockburn, M. S. Skolnick, and L. R. Wilson
Intersublevel polaron dephasing in self-assembled quantum dots
Physical Review B 77, Rapid com., 041307(R) (2008); e-print arXiv:0710.5095.

35. K. W. Jobson, J. -P. R. Wells, R. E. I. Schropp, N. Q. Vinh, J. I. Dijkhuis
Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium
Journal of Applied Physics 103, 013106 (2008).

34. P. Aivaliotis, E. A. Zibik, L. R. Wilson, J. W. Cockburn, M. Hopkinson, N. Q. Vinh
Two photon absorption in quantum dot-in-a-well infrared photodetectors
Applied Physics Letters. 92, 023501 (2008).

33. K. W. Jobson, J. -P. R. Wells, N. Q. Vinh, P. J. Phillips, C. R. Pidgeon, and J. I. Dijkhuis
Mid-infrared pump–probe spectroscopy of Si–H stretch modes in porous silicon
Optical Materials 30, 740 (2008).

32. I. Izeddin, M. A. J. Klik, N. Q. Vinh, M. S. Bresler, and T. Gregorkiewicz
Mid-infrared spectroscopy of the Er-related donor state in Si/Si:Er3+ nanolayers
Materials Science and Engineering B 146, 131 (2008).

31. S. Minissale, N. Q. Vinh, and T. Gregorkiewicz
Pump-probe investigations of THz transitions in Si/Si:Er3+ nanolayers
Materials Science and Engineering B 146, 160 (2008).

2007

30. P. Rauter, T. Fromherz, N. Q. Vinh, B. N. Murdin, J. P. Phillips, C. R. Pidgeon, L. Diehl, G. Dehlinger, D. Grützmacher, Ming Zhao, Wei-Xin Ni, and G Bauer
Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
New Journal of Physics 9, 128 (2007).

29. I. Izeddin, M. A. J. Klik, N. Q. Vinh, M. S. Bresler, and T. Gregorkiewicz
Donor-State-Enabling Er-Related Luminescence in Silicon: Direct Identification and Resonant Excitation
Physical Review Letters 99, 077401 (2007).

28. N. Q. Vinh, S. Minissale, H. Vrielinck, and T. Gregorkiewicz
Concentration of Er3+ ions contributing to 1.5-um emission in Si/Si:Er nanolayers
Physical Review B 76, 085339 (2007).

27. M. Califano, N. Q. Vinh, P. J. Phillips, Z. Ikoni´c, R. W. Kelsall, P. Harrison, C. R. Pidgeon, B. N. Murdin, D. J. Paul, P. Townsend, J. Zhang, I. M. Ross, and A. G. Cullis
Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness
Physical Review B 75, 045338 (2007).

2006

26. P. Rauter, T. Fromherz, G. Bauer, N. Q. Vinh, B. N. Murdin, J. P. Phillips, C. R. Pidgeon, L. Diehl, G. Dehlinger, and D. Grutzmacher
Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments
Applied Physics Letters. 89, 211111 (2006); (also selected by Editors for publication in the December 2006 issue of Virtual Journal of Utrafast Science).

25. K. W. Jobson, J.-P. R. Wells, N. Q. Vinh, P. J. Phillips, C. R. Pidgeon, and J. I. Dijkhuis
Vibrational relaxation pathways in porous silicon: A time-resolved infrared spectroscopic study
Physical Review B 74, 165205 (2006).

24. K. K. Kohli, Gordon Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, and K. M. Itoh
Isotope dependence of the lifetime of the 1136 cm-1 vibration of oxygen in silicon
Physical Review Letters 96, 225503 (2006).

23. K. K. Kohli, G. Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, and K.M. Itoh
Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon
Nuclear Instruments and Methods in Physics Research B 253, 200 (2006).

22. Z. F. Krasilnik, B. A. Andreev, D. I. Kryzhkov, L. V. Krasilnikova, V. P. Kuznetsov, D. Y. Remizov, V. B. Shmagin, M. V. Stepikhova, A. N. Yablonskiy, T. Gregorkievicz, N. Q. Vinh, W. Jantsch, H. Przybylinska, V. Y. Timoshenko, and D. M. Zhigunov
Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications
Journal of Materials Research 21, 574 (2006).

21. (Conference paper) P. Rauter, T. Fromherz, G. Bauer, N. Q. Vinh, P. J. Phillips, C. R. Pidgeon, B. N. Murdin, L. Diehl, G. Dehlinger, and D. Grutzmacher
Direct Measurement of HH2-HH1 Intersubband Lifetimes in SiGe Quantum Cascade Structures
2006 International SiGe Technology and Device Meeting, Princeton, New Jersey (2006).

20. (Conference paper) E. A. Zibik, B. A. Carpenter, L. R. Wilson, J. W. Cockburn, P. J. Phillips, N. Q. Vinh, M. J. Steer, and M. Hopkinson
Dephasing of Polarons in InAs/GaAs Self-Assembled Quantum Dots
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Long Beach, California (2006).

2005

19. N. Q. Vinh, S. Minissale, B. A. Andreev, and T. Gregorkiewicz
The Auger process of luminescence quenching in Si/Si:Er multinanolayers
Journal of Physics: Condensed Matter 17, S2191 (2005).

18. N. Q. Vinh, J. Phillips, Gordon Davies, and T. Gregorkiewicz
Time-resolved free-electron laser spectroscopy of a copper isoelectronic center in silicon
Physical Review B 71, 085206 (2005).

17. (Conference paper) Z. F. Krasilnik, B. A. Andreev, D. I. Kryzhkov, L. V. Krasilnikova, V. P. Kuznetsov, D. Y. Remizov, V. B. Shmagin, M. V. Stepikhova, A. N. Yablonskiy, T. Gregorkievicz, N. Q. Vinh, W. Jantsch, H. Przybylinska, V. Y. Timoshenko, and D. M. Zhigunov
Erbium doped silicon single- and multilayer structures for LED and laser applications
Materials Research Society Symposium Proceedings 866, V1.4.1 (2005).

2004

PhD thesis, N. Q. Vinh
Optical properties of isoelectronic centers in crystalline silicon
ISBN 90-9018671-9 (2004).

16. N. Q. Vinh, H. Przybylinska, Z. F. Krasil’nik, and T. Gregorkiewicz
Optical properties of a single type of optically active center in Si/Si:Er nanostructures
Physical Review B 70, 115332 (2004); (also selected by Editors for publication in the Virtual Journal of Nanoscale Science & Technology Vol. 10, (15) - October 11, 2004).

2003

15. Gordon Davies, T. Gregorkiewicz, M. Zafar Iqbal, M. Kleverman, E. C. Lightowlers, N. Q. Vinh, and Mengxia Zhu
Optical properties of a silver-related defect in silicon
Physical Review B 67, 235111 (2003).

14. N. Q. Vinh, H. Przybylinska, Z. F. Krasil’nik, and T. Gregorkiewicz
Microscopic structure of Er-related optically active centers in crystalline silicon
Physical Review Letters 90, 066401 (2003).

13. (Conference paper) H. Przybylinska, N. Q. Vinh, B. A. Andreev, Z. F. Krasil’nik, and T. Gregorkiewicz
Microscopic structure of Er-related optically active centers in Si
Materials Research Society Symposium Proceedings 770, I7.1 (2003).

12. (Conference paper) N. Q. Vinh and T. Gregorkiewicz
Two-color mid-infrared spectroscopy of isoelectronic centers in silicon
Materials Research Society Symposium Proceedings 770, I4.2 (2003).

11. N. Q. Vinh, M. Klik, B. A. Andreev, and T. Gregorkiewicz
Spectroscopic characterization of Er-1 center in selectively doped silicon
Materials Science and Engineering: B 105, 150, (2003).

10. M. Forcales, M. A. J. Klik, N. Q. Vinh, J. Phillips, J-P. R. Wells, and T. Gregorkiewicz
Two-color mid-infrared spectroscopy of optically doped semiconductors
Journal of Luminescence 102-103, 85 (2003).

9. N. Q. Vinh, H. Przybylinska, Z. F. Krasil’nik, and T. Gregorkiewicz
Magneto-optical study of Er3+-related center in selectively doped Si:Er
Physica E 16, 544 (2003).

2002

8. N. Q. Vinh, T. Gregorkiewicz, and K. Thonke
780-meV photoluminescence band in silver-doped silicon: Isotope effect and time-resolved spectroscopy
Physical Review B 65, 033202 (2002).

7. O. B. Gusev, M. S. Bresler, P. E. Pak, I. N. Yassievich, M. Forcales, N. Q. Vinh, and T. Gregorkiewicz
Excitation cross-section of erbium in semiconductor matrices under optical pumping
Solid State Phenomena 82-84, 651 (2002).

2001

6. B. J. Pawlak, N. Q. Vinh, I. N. Yassievich, and T. Gregorkiewicz
Influence of p-n junction formation at a Si/Si:Er interface on low-temperature excitation of Er3+ ions in crystalline silicon
Physical Review B 64, 132202 (2001).

5. O. B. Gusev, M. S. Bresler, P. E. Pak, I. N. Yassievich, M. Forcales, N. Q. Vinh, and T. Gregorkiewicz
Excitation cross section of erbium in semiconductor matrices under optical pumping
Physical Review B 64, 075302 (2001).

4. N. Q. Vinh, M. A. J. Klik, T. Gregorkiewicz
Time-resolved photoluminescence study of Si:Ag
Physica B 308-310, 414 (2001).

3. N. Q. Vinh, I. N. Yassievich, and T. Gregorkiewicz
Erbium excitation across the bulk of silicon wafer: an effect of p–n junction at Si/Si:Er interface
Physica B 308-310, 357 (2001).

2. N. Q. Vinh, H. Przybylinska, Z. F. Krasil’nik, B. A. Andreev, T. Gregorkiewicz
Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon
Physica B 308-310, 340 (2001).

1. M. Forcales, M. Klik, N. Q. Vinh, I. V. Bradley, J-P. R. Wells, T. Gregorkiewicz
Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ions
Journal of Luminescence 94-95, 243 (2001).